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IRFP150MPBF

  • IRFP150MPBF
  • IRFP150MPBF
  • IRFP150MPBF
  • IRFP150MPBF
IRFP150MPBF
金属氧化物半导体场效应晶体管
Infineon
Single N-Channe
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:100V
Drain-Source On Resistance-Max:36mΩ
Rated Power Dissipation:160W
Qg Gate Charge:110nC
Gate-Source Voltage-Max [Vgss]:20V
Drain Current:42A
Turn-on Delay Time:11ns
Turn-off Delay Time:45ns
Rise Time:56ns
Fall Time:40ns
Operating Temp Range:-55°C to +175°C
Gate Source Threshold:4V
Input Capacitance:1900pF
Package Style: TO-247AC
Mounting Method:Through Hole
PDF(1)

25

17.3979

434.9475

100

15.2396

1523.96

500

14.6621

7331.05

1000

14.3024

14302.4

3125

13.8767

43364.6875

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Single N-Channel 100 V 36 mOhm 110 nC HEXFET® Power Mosfet - TO-247AC
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