IRFP064NPBF Mosfets_Inventory of electronic components_Electronic equipment_Power management

IRFP064NPBF


：	IRFP064NPBF
：	金属氧化物半导体场效应晶体管
：	Infineon
：	Single N-Channe
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	Dual N-Ch
Drain-to-Source Voltage [Vdss]:	55V
Drain-Source On Resistance-Max:	8mΩ
Rated Power Dissipation:	200\|W
Qg Gate Charge:	32nC
Mounting Method:	Through Hole

PDF(1)

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33.5211

8380.275

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