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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 14.4mΩ |
| Rated Power Dissipation: | 3.6W |
| Qg Gate Charge: | 32nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 11A |
| Turn-on Delay Time: | 5.4ns |
| Turn-off Delay Time: | 12ns |
| Rise Time: | 8.7ns |
| Fall Time: | 3.5ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 4V |
| Technology: | Si |
| Height - Max: | 0.9mm |
| Length: | 6mm |
| Input Capacitance: | 1256pF |
| Package Style: | PQFN 5 x 6 mm |
| Mounting Method: | Surface Mount |
4000
11.3186
45274.4
