TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 100V |
Drain-Source On Resistance-Max: | 7mΩ |
Rated Power Dissipation: | 300W |
Qg Gate Charge: | 250nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 130A |
Turn-on Delay Time: | 26ns |
Turn-off Delay Time: | 68ns |
Rise Time: | 110ns |
Fall Time: | 78ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 4V |
Technology: | Si |
Height - Max: | 9.02mm |
Length: | 10.66mm |
Input Capacitance: | 7670pF |
Package Style: | TO-220-3 (TO-220AB) |
1
50.7164
50.7164
25
45.4161
1135.4025
75
43.8383
3287.8725
250
42.1187
10529.675
750
40.5408
30405.6