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| TYPE | DESCRIPTION |
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 19.4mΩ |
| Rated Power Dissipation: | 2.5W |
| Qg Gate Charge: | 25nC |
| Gate-Source Voltage-Max [Vgss]: | 25V |
| Drain Current: | 9.2A |
| Turn-on Delay Time: | 16ns |
| Turn-off Delay Time: | 55ns |
| Rise Time: | 44ns |
| Fall Time: | 49ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 1.8V |
| Input Capacitance: | 1110pF |
| Package Style: | SOIC-8 |
| Mounting Method: | Surface Mount |
4000
4.3646
17458.4
8000
4.1572
33257.6
12000
3.9398
47277.6
16000
3.7224
59558.4
