TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 30V |
Drain-Source On Resistance-Max: | 8.7mΩ |
Rated Power Dissipation: | 2.5W |
Qg Gate Charge: | 8.1nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 14A |
Turn-on Delay Time: | 10ns |
Turn-off Delay Time: | 11ns |
Rise Time: | 9.9ns |
Fall Time: | 5ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 1.8V |
Input Capacitance: | 1020pF |
Package Style: | SOIC-8 |
Mounting Method: | Surface Mount |
4000
4.0815
16326
8000
3.864
30912
12000
3.7224
44668.8
16000
3.5049
56078.4