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| TYPE | DESCRIPTION |
| Fet Type: | Dual N-Ch |
| No of Channels: | 2 |
| Drain-to-Source Voltage [Vdss]: | 50V |
| Drain-Source On Resistance-Max: | 0.13Ω |
| Rated Power Dissipation: | 2|W |
| Qg Gate Charge: | 12nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 3A |
| Turn-on Delay Time: | 9ns |
| Turn-off Delay Time: | 45ns |
| Rise Time: | 8ns |
| Fall Time: | 25ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 3V |
| Technology: | Si |
| Input Capacitance: | 290pF |
| Package Style: | SOIC-8 |
| Mounting Method: | Surface Mount |
4000
7.7379
30951.6
