FQD12N20TM Mosfets_Inventory of electronic components_Electronic equipment_Power management

FQD12N20TM


：	FQD12N20TM
：	金属氧化物半导体场效应晶体管
：	onsemi
：	N-Channel 200 V
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	200V
Drain-Source On Resistance-Max:	280mΩ
Rated Power Dissipation:	2.5\|W
Qg Gate Charge:	18nC
Package Style:	TO-252-3 (DPAK)
Mounting Method:	Surface Mount

PDF(1)

2500

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16841.25

5000

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32216.5

7500

6.0842

45631.5

10000

5.8009

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