FDPC8011S Mosfets_Inventory of electronic components_Electronic equipment_Power management

FDPC8011S


：	FDPC8011S
：	金属氧化物半导体场效应晶体管
：	onsemi
：	Dual N-Channel
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	Dual N-Ch
Drain-to-Source Voltage [Vdss]:	25V
Drain-Source On Resistance-Max:	6mΩ
Rated Power Dissipation:	900\|mW
Qg Gate Charge:	19nC
Package Style:	POWER 33-8
Mounting Method:	Surface Mount

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