FDP8441 Mosfets_Inventory of electronic components_Electronic equipment_Power management

FDP8441


：	FDP8441
：	金属氧化物半导体场效应晶体管
：	onsemi
：	N-Channel 40 V
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	40V
Drain-Source On Resistance-Max:	2.7mΩ
Rated Power Dissipation:	300\|W
Qg Gate Charge:	280nC
Package Style:	TO-220-3 (TO-220AB)
Mounting Method:	Flange Mount

PDF(1)

400

30.9049

12361.96

800

25.3015

20241.2

1200

25.0177

30021.24

1600

24.7239

39558.24

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