FDD6637 Mosfets_Inventory of electronic components_Electronic equipment_Power management

FDD6637


：	FDD6637
：	金属氧化物半导体场效应晶体管
：	onsemi
：	P-Channel 35 V
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	P-Ch
Drain-to-Source Voltage [Vdss]:	35V
Drain-Source On Resistance-Max:	11.6mΩ
Rated Power Dissipation:	1.3\|W
Qg Gate Charge:	45nC
Package Style:	TO-252-3 (DPAK)
Mounting Method:	Surface Mount

PDF(1)

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