FDC3612 Mosfets_Inventory of electronic components_Electronic equipment_Power management

FDC3612


：	FDC3612
：	金属氧化物半导体场效应晶体管
：	onsemi
：	N-Channel 100 V
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	100V
Drain-Source On Resistance-Max:	125mΩ
Rated Power Dissipation:	0.8\|W
Qg Gate Charge:	14nC
Package Style:	SSOT-6
Mounting Method:	Surface Mount

PDF(1)

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