TYPE | DESCRIPTION |
Fet Type: | P-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 40V |
Drain-Source On Resistance-Max: | 50mΩ |
Rated Power Dissipation: | 2.1W |
Qg Gate Charge: | 23.2nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 6A |
Turn-on Delay Time: | 18.4ns |
Turn-off Delay Time: | 38.8ns |
Rise Time: | 28.2ns |
Fall Time: | 28.6ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 2.2V |
Technology: | Si |
Height - Max: | 0.58mm |
Length: | 2.05mm |
Input Capacitance: | 1382pF |
Package Style: | UDFN-6 |
Mounting Method: | Surface Mount |
3000
4.223
12669
6000
4.0815
24489
9000
3.864
34776
12000
3.6565
43878