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BSB165N15NZ3GXUMA1

  • BSB165N15NZ3GXUMA1
  • BSB165N15NZ3GXUMA1
： BSB165N15NZ3GXUMA1
： 金属氧化物半导体场效应晶体管
： Infineon
： Single N-Channe
： -
： Reel
： -
TYPEDESCRIPTION
Fet Type:N-Ch
Drain-to-Source Voltage [Vdss]:150V
Drain-Source On Resistance-Max:16.5mΩ
Rated Power Dissipation:2.8|W
Qg Gate Charge:26nC
Mounting Method:Surface Mount
PDF(1)

5000

33.6626

168313

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