15815509278
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AS1M025120P

Part number AS1M025120P
Product classification Single FETs, MOSFETs
Manufacturer Anbon Semiconductor
Description N-CHANNEL SILICON CARBIDE POWER
Encapsulation
Packing Tube
Quantity 124
RoHS status YES
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Total number

Quantity

Price

Total price

1

$39.9315

$39.9315

10

$35.4900

$354.9000

100

$31.0380

$3,103.8000

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Product parameters
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TYPEDESCRIPTION
MfrAnbon Semiconductor
Series-
PackageTube
Product StatusACTIVE
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Rds On (Max) @ Id, Vgs34mOhm @ 50A, 20V
Power Dissipation (Max)463W (Tc)
Vgs(th) (Max) @ Id4V @ 15mA
Supplier Device PackageTO-247-3
Drive Voltage (Max Rds On, Min Rds On)20V
Vgs (Max)+25V, -10V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs195 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds3600 pF @ 1000 V

Roving Networks (Microchip Technology)
MEMS OSC XO 133.0000MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 24.5760MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 100.0000MHZ LVPECL
Roving Networks (Microchip Technology)
MEMS OSC XO 125.0000MHZ LVPECL
Roving Networks (Microchip Technology)
MEMS OSCILLATOR, ULTRA LOW POWER
Roving Networks (Microchip Technology)
MEMS OSC XO 133.3330MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 175.0000MHZ LVDS SMD
Roving Networks (Microchip Technology)
MEMS OSC LOW JITTER 125MHZ LVDS
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