15815509278
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2SJ529L06-E

Part number 2SJ529L06-E
Product classification Single FETs, MOSFETs
Manufacturer Renesas
Description 2SJ529L06 - P-CHANNEL POWER MOSF
Encapsulation
Packing Bulk
Quantity 60244
RoHS status NO
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295

$1.0710

$315.9450

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Product parameters
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TYPEDESCRIPTION
MfrRenesas
Series-
PackageBulk
Product StatusOBSOLETE
Package / CaseTO-251-3 Long Leads, IPak, TO-251AB
Mounting TypeThrough Hole
Operating Temperature150°C
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Rds On (Max) @ Id, Vgs160mOhm @ 5A, 10V
Power Dissipation (Max)20W (Tc)
Vgs(th) (Max) @ Id2V @ 1mA
Supplier Device PackageDPAK(L)-(2)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds580 pF @ 10 V

Roving Networks (Microchip Technology)
MEMS OSC XO 133.0000MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 24.5760MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 100.0000MHZ LVPECL
Roving Networks (Microchip Technology)
MEMS OSC XO 125.0000MHZ LVPECL
Roving Networks (Microchip Technology)
MEMS OSCILLATOR, ULTRA LOW POWER
Roving Networks (Microchip Technology)
MEMS OSC XO 133.3330MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 175.0000MHZ LVDS SMD
Roving Networks (Microchip Technology)
MEMS OSC LOW JITTER 125MHZ LVDS
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