Features
Universal, 3 way terminals:
push-on, wrap around or solder
High thermal conductivity package,
electrically insulated case
Center hole fixing
Excellent power/volume ratio
UL E 62320 approved
Nickel plated terminals solderable as per MIL-STD-202 Method
208; solder: Sn/Pb (60/40); solder temperature: 235-260°C
max. time: 8-10 secs
Description
A range of extremely compact, encapsulated
single phase bridge rectifiers offering efficient and
reliable operation. They are intended for use in
general purpose and instrumentation applica-
tions.
Parameters 26MB-A 36MB-A Units
Major Ratings and Characteristics
I
O
25 35 A
@ T
C
65 60
o
C
I
FSM
@
50Hz 400 475 A
@ 60Hz 420 500 A
I
2
t @ 50Hz 790 1130 A
2
s
@ 60Hz 725 1030 A
2
s
V
RRM
range 200 to 1200 V
T
J
- 55 to 150
o
C
SINGLE PHASE BRIDGE Power Modules
25 A
35 A
MB SERIES
Bulletin I2715 rev. I 03/03
1
www.irf.com
MB Series
2
Bulletin I2715 rev. I 03/03
www.irf.com
I
O
Maximum DC output current 25 35 A Resistive or inductive load
20 28 A Capacitive load
@ Case temperature 65 60 °C
I
FSM
Maximum peak, one-cycle 400 475 A t = 10ms No voltage
non-repetitive forward current 420 500 t = 8.3ms reapplied
335 400 t = 10ms 100% V
RRM
350 420 t = 8.3ms reapplied Initial T
J
= T
J
max.
I
2
t Maximum I
2
t for fusing 790 1130 A
2
s t = 10ms No voltage
725 1030 t = 8.3ms reapplied
560 800 t = 10ms 100% V
RRM
512 730 t = 8.3ms reapplied
I
2
√t Maximum I
2
√t for fusing 5.6 11.3 KA
2
√sI
2
t for time t
x
= I
2
√t x √t
x
;
0.1 ≤ t
x
≤ 10ms, V
RRM
= 0V
V
F(TO)1
Low-level of threshold voltage 0.76 0.79 V (16.7% x π x I
F(AV)
< I < π x I
F(AV)
), @ T
J
max.
V
F(TO)2
High-level of threshold voltage 0.92 0.96 (I > π x I
F(AV)
), @ T
J
max.
r
t1
Low-level forward slope resistance 6.8 5.8 m Ω (16.7% x π x I
F(AV)
< I < π x I
F(AV)
), @ T
J
max.
r
t2
High-level forward slope resistance 5.0 4.5 (I > π x I
F(AV)
), @ T
J
max.
V
FM
Maximum forward voltage drop 1.11 1.14 V T
J
= 25
o
C, I
FM
= 40A
PK
(26MB)
T
J
= 25
o
C, I
FM
= 55A
PK
(36MB)
I
RRM
Max. DC reverse current 10 10 µAT
J
= 25
o
C, per diode at V
RRM
V
INS
RMS isolation voltage base plate 2700 2700 V f = 50 Hz, t = 1s
Forward Conduction
Voltage V
RRM
, maximum repetitive V
RSM
, maximum non- I
RRM
max.
Type number Code peak reverse voltage repetitive peak rev. voltage @ T
J
max.
VV
20 200 275
40 400 500
26MB..A 60 600 725 2
36MB..A 80 800 900
100 1000 1100
120 1200 1300
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Parameters 26MB-A 36MB-A Units Conditions
tp = 400µs
MB Series
3
Bulletin I2715 rev. I 03/03
www.irf.com
T
J
Junction temperature range - 55 to 150
o
C
T
stg
Storage temperature range - 55 to 150
o
C
R
thJC
Max. thermal resistance junction to case 1.7 1.2 K/W Per bridge
R
thCS
Max. thermal resistance, case to heatsink 0.2 K/W Mounting surface , smooth, flat and greased
wt Approximate weight 20 g
T Mounting Torque ± 10% 2.0 Nm Bridge to heatsink
All dimensions in millimetres (inches)
Suggested plugging force:
200 N max; axially applied to faston terminals
26 = 25A (Avg)
36 = 35A (Avg)
1 - Current rating code:
2 - Circuit configuration:
MB = Single phase european coding
3 - Voltage code: MB series = code x 10 = V
RRM
4 - Diode bridge rectifier:
A = 26MB, 36MB Series
36 MB 120 A
1
2
3
4
Thermal and Mechanical Specifications
Ordering Information Table
Outline Table
Device Code
Parameters 26MB-A 36MB-A Units Conditions
Not To Scale
0.8 (.03)
6.3 (.25)
10.5 (.41)
20.3 (.80)
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