TYPE | DESCRIPTION |
Manufacturer: | Transphorm |
Product Category: | RF JFET Transistors |
RoHS: | Details |
Transistor Type: | HEMT |
Technology: | GaN |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 650 V |
Vgs - Gate-Source Breakdown Voltage: | - 18 V, + 18 V |
Id - Continuous Drain Current: | 6.5 A |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 21 W |
Mounting Style: | SMD/SMT |
Package / Case: | PQFN-8 |
Packaging: | Reel |
Brand: | Transphorm |
Moisture Sensitive: | Yes |
Product Type: | RF JFET Transistors |
Rds On - Drain-Source Resistance: | 492 mOhms |
Series: | Gen IV |
Factory Pack Quantity: Factory Pack Quantity: | 500 |
Subcategory: | Transistors |
Vgs th - Gate-Source Threshold Voltage: | 2.1 V |
3000
4.18
12540