TYPE | DESCRIPTION |
Manufacturer: | Toshiba |
Product Category: | MOSFET |
RoHS: | Details |
Technology: | Si |
Mounting Style: | SMD/SMT |
Package / Case: | PS-8 |
Transistor Polarity: | N-Channel, P-Channel |
Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 40 V |
Id - Continuous Drain Current: | 5 A |
Rds On - Drain-Source Resistance: | 62.8 mOhms, 82.2 mOhms |
Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V |
Qg - Gate Charge: | 11.8 nC, 18 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 1.77 W |
Channel Mode: | Enhancement |
Qualification: | AEC-Q101 |
Tradename: | U-MOSIV / U-MOSVI |
Packaging: | Reel |
Packaging: | Cut Tape |
Packaging: | MouseReel |
Brand: | Toshiba |
Configuration: | Dual |
Fall Time: | 4 ns, 33 ns |
Product Type: | MOSFET |
Rise Time: | 5 ns, 8 ns |
Series: | TPCP8407 |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel, 1 P-Channel |
Typical Turn-Off Delay Time: | 17 ns, 126 ns |
Typical Turn-On Delay Time: | 12 ns, 25 ns |
Unit Weight: | 0.000600 oz |
1
1.4
1.4
10
1.241
12.41
100
0.964
96.4
250
0.939
234.75
500
0.757
378.5
1000
0.723
723
3000
0.618
1854
6000
0.602
3612
9000
0.597
5373