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| TYPE | DESCRIPTION |
| Manufacturer: | Toshiba |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | 2-10AF1A-9 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Id - Continuous Drain Current: | 18 A |
| Rds On - Drain-Source Resistance: | 122 mOhms |
| Vgs - Gate-Source Voltage: | - 30 V, + 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Qg - Gate Charge: | 29 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 150 W |
| Channel Mode: | Enhancement |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Brand: | Toshiba |
| Configuration: | Single |
| Fall Time: | 4 ns |
| Height: | 2.3 mm |
| Length: | 10.38 mm |
| Product: | MOSFET |
| Product Type: | MOSFET |
| Rise Time: | 16 ns |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 |
| Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Type: | Silicon N-Channel MOSFET |
| Typical Turn-Off Delay Time: | 70 ns |
| Typical Turn-On Delay Time: | 37 ns |
| Width: | 9.9 mm |
| Unit Weight: | 0.026455 oz |
1
6.46
6.46
10
5.82
58.2
25
5.5
137.5
100
4.78
478
250
4.62
1155
500
4.06
2030
1000
3.42
3420
2000
3.32
6640
4000
2.94
11760
