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| TYPE | DESCRIPTION |
| Manufacturer: | Qorvo |
| Product Category: | RF JFET Transistors |
| RoHS: | Details |
| Transistor Type: | HEMT |
| Technology: | GaN-on-SiC |
| Operating Frequency: | 0.03 GHz to 3 GHz |
| Gain: | 17.1 dB |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 32 V |
| Vgs - Gate-Source Breakdown Voltage: | - 2.7 V |
| Id - Continuous Drain Current: | 557 mA |
| Output Power: | 11 W |
| Pd - Power Dissipation: | 15.3 W |
| Mounting Style: | SMD/SMT |
| Package / Case: | QFN-EP-16 |
| Packaging: | Tray |
| Brand: | Qorvo |
| Configuration: | Single |
| Development Kit: | TGF3015-SM-EVB1 |
| Moisture Sensitive: | Yes |
| Product Type: | RF JFET Transistors |
| Series: | TGF3015 |
| Factory Pack Quantity: Factory Pack Quantity: | 100 |
| Subcategory: | Transistors |
| Part # Aliases: | TGF3015 1120419 |
| Unit Weight: | 0.237911 oz |
1
172.3
172.3
25
123.62
3090.5
100
97.34
9734
