TYPE | DESCRIPTION |
Manufacturer: | Vishay |
Product Category: | MOSFET |
RoHS: | Details |
Technology: | Si |
Mounting Style: | SMD/SMT |
Package / Case: | SOIC-8 |
Transistor Polarity: | P-Channel |
Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Id - Continuous Drain Current: | 30 A |
Rds On - Drain-Source Resistance: | 7 mOhms |
Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
Qg - Gate Charge: | 113 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 7 W |
Channel Mode: | Enhancement |
Tradename: | TrenchFET |
Packaging: | Reel |
Packaging: | Cut Tape |
Brand: | Vishay Semiconductors |
Fall Time: | 20 ns |
Product Type: | MOSFET |
Rise Time: | 146 ns |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Subcategory: | MOSFETs |
Transistor Type: | 1 P-Channel |
Typical Turn-Off Delay Time: | 57 ns |
Typical Turn-On Delay Time: | 20 ns |
Part # Aliases: | SQ4483EY-T1_GE3 |
1
2.86
2.86
10
2.44
24.4
100
2.02
202
250
1.942
485.5
500
1.658
829
1000
1.304
1304
2500
1.303
3257.5
5000
1.223
6115