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| TYPE | DESCRIPTION |
| Manufacturer: | Vishay |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOIC-8 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Id - Continuous Drain Current: | 15 A |
| Rds On - Drain-Source Resistance: | 9 mOhms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Qg - Gate Charge: | 53 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 175 C |
| Pd - Power Dissipation: | 5 W |
| Channel Mode: | Enhancement |
| Tradename: | TrenchFET |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Brand: | Vishay Semiconductors |
| Fall Time: | 8 ns |
| Product Type: | MOSFET |
| Rise Time: | 7 ns |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 29 ns |
| Typical Turn-On Delay Time: | 11 ns |
| Part # Aliases: | SQ4410EY-T1_GE3 |
1
2.9
2.9
10
2.6
26
100
2.04
204
500
1.676
838
1000
1.32
1320
2500
1.32
3300
