TYPE | DESCRIPTION |
Manufacturer: | Vishay |
Product Category: | MOSFET |
RoHS: | Details |
Technology: | Si |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-23-3 |
Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 40 V |
Id - Continuous Drain Current: | 8 A |
Rds On - Drain-Source Resistance: | 31 mOhms |
Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
Qg - Gate Charge: | 8.7 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 3 W |
Channel Mode: | Enhancement |
Tradename: | TrenchFET |
Packaging: | Reel |
Packaging: | Cut Tape |
Packaging: | MouseReel |
Brand: | Vishay / Siliconix |
Fall Time: | 5.7 ns |
Product Type: | MOSFET |
Rise Time: | 8.4 ns |
Series: | SQ2318AES |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 12 ns |
Typical Turn-On Delay Time: | 7.5 ns |
Part # Aliases: | SQ2318AES-T1_GE3 |
1
1.06
1.06
10
0.898
8.98
100
0.68
68
500
0.544
272
1000
0.443
443
3000
0.402
1206
6000
0.396
2376
9000
0.342
3078
24000
0.336
8064