TYPE | DESCRIPTION |
Manufacturer: | Vishay |
Product Category: | MOSFET |
RoHS: | Details |
Technology: | Si |
Mounting Style: | SMD/SMT |
Package / Case: | PowerPAIR-6x5F-8 |
Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Id - Continuous Drain Current: | 105 A, 257 A |
Rds On - Drain-Source Resistance: | 680 uOhms, 2.1 mOhms |
Vgs - Gate-Source Voltage: | - 16 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.2 V |
Qg - Gate Charge: | 25 nC, 81 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 38 W, 83 W |
Channel Mode: | Enhancement |
Tradename: | TrenchFET |
Packaging: | Reel |
Packaging: | Cut Tape |
Brand: | Vishay / Siliconix |
Configuration: | Dual |
Fall Time: | 5 ns, 10 ns |
Forward Transconductance - Min: | 93 S, 170 S |
Product Type: | MOSFET |
Rise Time: | 5 ns, 30 ns |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Subcategory: | MOSFETs |
Transistor Type: | TrenchFET Gen IV Power MOSFET |
Typical Turn-Off Delay Time: | 22 ns, 40 ns |
Typical Turn-On Delay Time: | 12 ns, 20 ns |
Unit Weight: | 0.011899 oz |
1
3.46
3.46
10
3
30
100
2.42
242
500
1.997
998.5
1000
1.577
1577
3000
1.576
4728