TYPE | DESCRIPTION |
Manufacturer: | Vishay |
Product Category: | MOSFET |
RoHS: | Details |
Technology: | Si |
Mounting Style: | Through Hole |
Package / Case: | TO-220AB-3 |
Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Id - Continuous Drain Current: | 35 A |
Rds On - Drain-Source Resistance: | 80 mOhms |
Vgs - Gate-Source Voltage: | - 30 V, + 30 V |
Vgs th - Gate-Source Threshold Voltage: | 5 V |
Qg - Gate Charge: | 42 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 227 W |
Channel Mode: | Enhancement |
Packaging: | Tube |
Brand: | Vishay / Siliconix |
Configuration: | Single |
Fall Time: | 31 ns |
Forward Transconductance - Min: | 4.6 S |
Product Type: | MOSFET |
Rise Time: | 96 ns |
Factory Pack Quantity: Factory Pack Quantity: | 1000 |
Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 37 ns |
Typical Turn-On Delay Time: | 31 ns |
Unit Weight: | 0.068784 oz |
1
9.2
9.2
10
8.28
82.8
25
8.02
200.5
100
6.78
678
500
5.78
2890
1000
5.2
5200