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| TYPE | DESCRIPTION |
| Manufacturer: | Vishay |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | Through Hole |
| Package / Case: | Super-247-3 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Id - Continuous Drain Current: | 38 A |
| Rds On - Drain-Source Resistance: | 150 mOhms |
| Vgs - Gate-Source Voltage: | - 30 V, + 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 5 V |
| Qg - Gate Charge: | 320 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 540 W |
| Channel Mode: | Enhancement |
| Packaging: | Tube |
| Brand: | Vishay / Siliconix |
| Configuration: | Single |
| Fall Time: | 69 ns |
| Forward Transconductance - Min: | 20 S |
| Product Type: | MOSFET |
| Rise Time: | 130 ns |
| Factory Pack Quantity: Factory Pack Quantity: | 480 |
| Subcategory: | MOSFETs |
| Transistor Type: | Power MOSFET |
| Typical Turn-Off Delay Time: | 92 ns |
| Typical Turn-On Delay Time: | 44 ns |
1
16.56
16.56
10
14.98
149.8
25
14.28
357
100
13.02
1302
250
12.62
3155
480
10.78
5174.4
960
10.44
10022.4
2880
market price
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.jpg "HF115F/012-2DS4A (257)")
