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| TYPE | DESCRIPTION |
| Manufacturer: | Vishay |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-252-3 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 500 V |
| Id - Continuous Drain Current: | 10.5 A |
| Rds On - Drain-Source Resistance: | 380 mOhms |
| Vgs - Gate-Source Voltage: | - 30 V, + 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Qg - Gate Charge: | 25 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 114 W |
| Channel Mode: | Enhancement |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Brand: | Vishay / Siliconix |
| Fall Time: | 15 ns |
| Product Type: | MOSFET |
| Rise Time: | 19 ns |
| Series: | E |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 35 ns |
| Typical Turn-On Delay Time: | 15 ns |
| Part # Aliases: | SIHD14N60E-GE3 |
1
4.8
4.8
10
4.32
43.2
25
4.08
102
100
3.48
348
500
2.86
1430
1000
2.38
2380
3000
2.28
6840
