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| TYPE | DESCRIPTION |
| Manufacturer: | Qorvo |
| Product Category: | RF JFET Transistors |
| RoHS: | Details |
| Transistor Type: | HEMT |
| Technology: | GaN-on-SiC |
| Operating Frequency: | 2.7 GHz to 2.9 GHz |
| Gain: | 21.2 dB |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 145 V |
| Vgs - Gate-Source Breakdown Voltage: | - 7 V to 2 V |
| Id - Continuous Drain Current: | 13 A |
| Maximum Drain Gate Voltage: | 55 V |
| Minimum Operating Temperature: | - 40 C |
| Maximum Operating Temperature: | + 85 C |
| Pd - Power Dissipation: | 237 W |
| Mounting Style: | SMD/SMT |
| Package / Case: | NI780-2 |
| Brand: | Qorvo |
| Configuration: | Single |
| Development Kit: | QPD1881LEVB01 |
| Moisture Sensitive: | Yes |
| Product Type: | RF JFET Transistors |
| Series: | QPD1881L |
| Factory Pack Quantity: Factory Pack Quantity: | 25 |
| Subcategory: | Transistors |
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1242.16
1242.16
25
828.1
20702.5
