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| TYPE | DESCRIPTION |
| Manufacturer: | Qorvo |
| Product Category: | RF MOSFET Transistors |
| RoHS: | Details |
| Transistor Polarity: | Dual N-Channel |
| Technology: | GaN-on-SiC |
| Id - Continuous Drain Current: | 28 A |
| Vds - Drain-Source Breakdown Voltage: | 65 V |
| Operating Frequency: | 1 GHz to 1.1 GHz |
| Gain: | 22.5 dB |
| Output Power: | 1.862 kW |
| Minimum Operating Temperature: | - 40 C |
| Maximum Operating Temperature: | + 85 C |
| Package / Case: | NI-1230-4 |
| Packaging: | Tray |
| Brand: | Qorvo |
| Moisture Sensitive: | Yes |
| Number of Channels: | 2 Channel |
| Pd - Power Dissipation: | 685 W |
| Product Type: | RF MOSFET Transistors |
| Series: | QPD1025 |
| Factory Pack Quantity: Factory Pack Quantity: | 18 |
| Subcategory: | MOSFETs |
| Type: | RF Power MOSFET |
| Vgs - Gate-Source Voltage: | - 2.8 V |
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2912.94
2912.94
18
market price
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