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| TYPE | DESCRIPTION |
| Manufacturer: | onsemi |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | Through Hole |
| Package / Case: | APMCA-16 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 4 Channel |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Id - Continuous Drain Current: | 26 A |
| Rds On - Drain-Source Resistance: | 82 mOhms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 5 V |
| Qg - Gate Charge: | 79.7 nC |
| Minimum Operating Temperature: | - 40 C |
| Maximum Operating Temperature: | + 125 C |
| Pd - Power Dissipation: | 126 W |
| Channel Mode: | Enhancement |
| Packaging: | Tube |
| Brand: | onsemi |
| Product Type: | MOSFET |
| Factory Pack Quantity: Factory Pack Quantity: | 72 |
| Subcategory: | MOSFETs |
1
62.6
62.6
10
57.74
577.4
25
55.14
1378.5
72
49.28
3548.16
504
47.42
23899.68
