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| TYPE | DESCRIPTION |
| Manufacturer: | onsemi |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Id - Continuous Drain Current: | 30 A |
| Rds On - Drain-Source Resistance: | 95 mOhms |
| Vgs - Gate-Source Voltage: | - 30 V, + 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Qg - Gate Charge: | 58 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 208 W |
| Channel Mode: | Enhancement |
| Packaging: | Tube |
| Brand: | onsemi |
| Product Type: | MOSFET |
| Factory Pack Quantity: Factory Pack Quantity: | 800 |
| Subcategory: | MOSFETs |
1
10.6
10.6
10
9.54
95.4
25
9.02
225.5
100
7.82
782
500
6.66
3330
800
5.82
4656
2400
5.64
13536
