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| TYPE | DESCRIPTION |
| Manufacturer: | NXP |
| Product Category: | RF MOSFET Transistors |
| RoHS: | Details |
| Transistor Polarity: | Dual N-Channel |
| Technology: | GaN-on-SiC |
| Id - Continuous Drain Current: | 24.3 mA |
| Vds - Drain-Source Breakdown Voltage: | 125 V |
| Operating Frequency: | 2400 MHz to 2500 MHz |
| Gain: | 14.9 dB |
| Output Power: | 307 W |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | NI-780H-4 |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Brand: | NXP Semiconductors |
| Number of Channels: | 2 Channel |
| Product Type: | RF MOSFET Transistors |
| Series: | MRF24300 |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |
| Subcategory: | MOSFETs |
| Type: | RF Power MOSFET |
| Vgs - Gate-Source Voltage: | - 8 V |
| Vgs th - Gate-Source Threshold Voltage: | - 2.3 V |
| Part # Aliases: | 935389771178 |
| Unit Weight: | 10.582189 oz |
1
284.42
284.42
50
284.42
14221
