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| TYPE | DESCRIPTION |
| Manufacturer: | Vishay |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220AB-3 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Id - Continuous Drain Current: | 5.2 A |
| Rds On - Drain-Source Resistance: | 800 mOhms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Qg - Gate Charge: | 14 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 50 W |
| Channel Mode: | Enhancement |
| Packaging: | Tube |
| Brand: | Vishay / Siliconix |
| Configuration: | Single |
| Fall Time: | 13 ns |
| Product Type: | MOSFET |
| Rise Time: | 22 ns |
| Series: | IRF |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 19 ns |
| Typical Turn-On Delay Time: | 7.2 ns |
| Part # Aliases: | IRF620PBF |
| Unit Weight: | 0.068784 oz |
1
2.08
2.08
10
2
20
100
1.56
156
500
1.28
640
1000
1.08
1080
2000
1.06
2120
5000
1.018
5090
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