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| TYPE | DESCRIPTION |
| Manufacturer: | Infineon |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | Through Hole |
| Package / Case: | IPAK-3 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 950 V |
| Id - Continuous Drain Current: | 2 A |
| Rds On - Drain-Source Resistance: | 3.7 Ohms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Qg - Gate Charge: | 6 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 22 W |
| Channel Mode: | Enhancement |
| Tradename: | CoolMOS |
| Packaging: | Tube |
| Brand: | Infineon Technologies |
| Configuration: | Single |
| Fall Time: | 40 ns |
| Product Type: | MOSFET |
| Rise Time: | 23 ns |
| Series: | P7 |
| Factory Pack Quantity: Factory Pack Quantity: | 75 |
| Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 46 ns |
| Typical Turn-On Delay Time: | 7ns |
| Part # Aliases: | IPU95R3K7P7 SP001792320 |
| Unit Weight: | 0.013655 oz |
1
2.4
2.4
10
2.16
21.6
75
1.679
125.925
525
1.384
726.6
1050
1.218
1278.9
(SN).jpg "RF-H102TD-1190(LF)(SN)")
