TYPE | DESCRIPTION |
Manufacturer: | Infineon |
Product Category: | MOSFET |
RoHS: | Details |
Technology: | Si |
Mounting Style: | SMD/SMT |
Package / Case: | VSON-4 |
Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 650 V |
Id - Continuous Drain Current: | 24 A |
Rds On - Drain-Source Resistance: | 115 mOhms |
Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 4.5 V |
Qg - Gate Charge: | 41 nC |
Minimum Operating Temperature: | - 40 C |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 144 W |
Channel Mode: | Enhancement |
Packaging: | Reel |
Packaging: | Cut Tape |
Brand: | Infineon Technologies |
Configuration: | Single |
Fall Time: | 3 ns |
Product Type: | MOSFET |
Rise Time: | 6.5 ns |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 16 ns |
Typical Turn-On Delay Time: | 70 ns |
Part # Aliases: | IPL65R115CFD7 SP005559260 |
1
12
12
10
10.78
107.8
100
8.82
882
500
7.54
3770
3000
7.54
22620