TYPE | DESCRIPTION |
Manufacturer: | Infineon |
Product Category: | MOSFET |
RoHS: | Details |
Technology: | Si |
Mounting Style: | Through Hole |
Package / Case: | TO-220-3 |
Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Id - Continuous Drain Current: | 9 A |
Rds On - Drain-Source Resistance: | 145 mOhms |
Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 3.5 V |
Qg - Gate Charge: | 31 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 27 W |
Channel Mode: | Enhancement |
Packaging: | Tube |
Brand: | Infineon Technologies |
Configuration: | Single |
Fall Time: | 7.2 ns |
Product Type: | MOSFET |
Rise Time: | 18 ns |
Factory Pack Quantity: Factory Pack Quantity: | 50 |
Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 71 ns |
Typical Turn-On Delay Time: | 27 ns |
Part # Aliases: | IPA60R145CFD7 SP001715638 |
Unit Weight: | 0.068784 oz |
1
8.52
8.52
10
7.68
76.8
100
6.26
626
500
5.36
2680