TYPE | DESCRIPTION |
Manufacturer: | onsemi |
Product Category: | MOSFET |
RoHS: | Details |
Technology: | Si |
Mounting Style: | Through Hole |
Package / Case: | TO-220-3 |
Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 800 V |
Id - Continuous Drain Current: | 17 A |
Rds On - Drain-Source Resistance: | 290 mOhms |
Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
Qg - Gate Charge: | 58 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 44 W |
Channel Mode: | Enhancement |
Tradename: | SuperFET II |
Packaging: | Tube |
Brand: | onsemi / Fairchild |
Configuration: | Single |
Fall Time: | 2.6 ns |
Forward Transconductance - Min: | 20 S |
Height: | 16.07 mm |
Length: | 10.36 mm |
Product Type: | MOSFET |
Rise Time: | 14 ns |
Series: | FCPF290N80 |
Factory Pack Quantity: Factory Pack Quantity: | 1000 |
Subcategory: | MOSFETs |
Typical Turn-Off Delay Time: | 61 ns |
Typical Turn-On Delay Time: | 22 ns |
Width: | 4.9 mm |
Unit Weight: | 0.068784 oz |
1
10.04
10.04
10
9.04
90.4
25
8.54
213.5
100
7.4
740
500
6.3
3150
1000
5.34
5340