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| TYPE | DESCRIPTION |
| Manufacturer: | Diodes Incorporated |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | PowerDI5060-8 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 80 V |
| Id - Continuous Drain Current: | 100 A |
| Rds On - Drain-Source Resistance: | 3.9 mOhms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Qg - Gate Charge: | 124.3 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 175 C |
| Pd - Power Dissipation: | 125 W |
| Channel Mode: | Enhancement |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Brand: | Diodes Incorporated |
| Configuration: | Single |
| Fall Time: | 20.9 ns |
| Product Type: | MOSFET |
| Rise Time: | 24.4 ns |
| Series: | DMTH8003 |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Subcategory: | MOSFETs |
| Typical Turn-Off Delay Time: | 47.9 ns |
| Typical Turn-On Delay Time: | 12.6 ns |
| Unit Weight: | 0.003422 oz |
1
3.98
3.98
10
3.58
35.8
25
3.38
84.5
100
2.88
288
500
2.38
1190
1000
1.959
1959
2500
1.779
4447.5
5000
1.757
8785
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