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| TYPE | DESCRIPTION |
| Manufacturer: | Diodes Incorporated |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Id - Continuous Drain Current: | 2.8 A |
| Rds On - Drain-Source Resistance: | 90 mOhms |
| Vgs - Gate-Source Voltage: | - 12 V, + 12 V |
| Vgs th - Gate-Source Threshold Voltage: | 300 mV |
| Qg - Gate Charge: | 2.8 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 1.1 W |
| Channel Mode: | Enhancement |
| Qualification: | AEC-Q101 |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Brand: | Diodes Incorporated |
| Configuration: | Single |
| Fall Time: | 1.7 ns |
| Product Type: | MOSFET |
| Rise Time: | 2.7 ns |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 4.2 ns |
| Typical Turn-On Delay Time: | 0.6 ns |
| Unit Weight: | 0.000282 oz |
1
1.16
1.16
10
0.862
8.62
100
0.539
53.9
500
0.364
182
1000
0.343
343
3000
0.343
1029
