取消
| TYPE | DESCRIPTION |
| Manufacturer: | Mitsubishi Electric |
| Product Category: | IGBT Modules |
| RoHS: | Details |
| Product: | IGBT Silicon Modules |
| Configuration: | Dual |
| Collector- Emitter Voltage VCEO Max: | 1200 V |
| Collector-Emitter Saturation Voltage: | 1.55 V |
| Continuous Collector Current at 25 C: | 1000 A |
| Gate-Emitter Leakage Current: | 0.5 uA |
| Pd - Power Dissipation: | 5355 W |
| Minimum Operating Temperature: | - 40 C |
| Maximum Operating Temperature: | + 150 C |
| Brand: | Mitsubishi Electric |
| Maximum Gate Emitter Voltage: | 20 V |
| Mounting Style: | Screw |
| Product Type: | IGBT Modules |
| Factory Pack Quantity: Factory Pack Quantity: | 10 |
| Subcategory: | IGBTs |
| Technology: | Si |
1
617.34
617.34
