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| TYPE | DESCRIPTION |
| Manufacturer: | Infineon |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | SiC |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 1.2 kV |
| Id - Continuous Drain Current: | 33 A |
| Rds On - Drain-Source Resistance: | 80 mOhms |
| Vgs - Gate-Source Voltage: | - 7 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 5.7 V |
| Qg - Gate Charge: | 28 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 175 C |
| Pd - Power Dissipation: | 150 mW |
| Channel Mode: | Enhancement |
| Packaging: | Tube |
| Brand: | Infineon Technologies |
| Product Type: | MOSFET |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Subcategory: | MOSFETs |
| Part # Aliases: | AIMW120R080M1 SP004807194 |
1
35.62
35.62
10
32.74
327.4
120
28.26
3391.2
