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| TYPE | DESCRIPTION |
| Manufacturer: | Microchip |
| Product Category: | Discrete Semiconductor Modules |
| RoHS: | Details |
| Product: | Power MOSFET Modules |
| Vgs - Gate-Source Voltage: | - 10 V, + 25 V |
| Mounting Style: | Chassis Mount |
| Package / Case: | SOT-227-4 |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 175 C |
| Packaging: | Tube |
| Brand: | Microchip / Microsemi |
| Configuration: | Single |
| Id - Continuous Drain Current: | 53 A |
| Number of Channels: | 1 Channel |
| Pd - Power Dissipation: | 208 W |
| Product Type: | Discrete Semiconductor Modules |
| Rds On - Drain-Source Resistance: | 50 mOhms |
| Factory Pack Quantity: Factory Pack Quantity: | 1 |
| Subcategory: | Discrete Semiconductor Modules |
| Technology: | SiC |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 1.2 kV |
| Unit Weight: | 1.780872 oz |
1
71.6
71.6
10
71.58
715.8
100
65.78
6578
