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| TYPE | DESCRIPTION |
| Manufacturer: | IXYS |
| Product Category: | Discrete Semiconductor Modules |
| RoHS: | Details |
| Product: | Power MOSFET Modules |
| Vgs - Gate-Source Voltage: | - 30 V, + 30 V |
| Mounting Style: | Chassis Mount |
| Package / Case: | SOT-227-4 |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Series: | IXTN46N50 |
| Packaging: | Tube |
| Brand: | IXYS |
| Configuration: | Single |
| Fall Time: | 42 ns |
| Height: | 9.6 mm |
| Id - Continuous Drain Current: | 46 A |
| Length: | 38.2 mm |
| Number of Channels: | 1 Channel |
| Pd - Power Dissipation: | 700 W |
| Product Type: | Discrete Semiconductor Modules |
| Rds On - Drain-Source Resistance: | 160 mOhms |
| Rise Time: | 50 ns |
| Factory Pack Quantity: Factory Pack Quantity: | 10 |
| Subcategory: | Discrete Semiconductor Modules |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Typical Turn-Off Delay Time: | 80 ns |
| Typical Turn-On Delay Time: | 40 ns |
| Vds - Drain-Source Breakdown Voltage: | 500 V |
| Width: | 25.07 mm |
| Unit Weight: | 1.058219 oz |
1
109.06
109.06
10
106.72
1067.2
30
102.46
3073.8
100
88.34
8834
