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| TYPE | DESCRIPTION |
| Manufacturer: | IXYS |
| Product Category: | Discrete Semiconductor Modules |
| RoHS: | Details |
| Product: | Power MOSFET Modules |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Mounting Style: | Chassis Mount |
| Package / Case: | SOT-227-4 |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Series: | IXTN32P60 |
| Packaging: | Tube |
| Brand: | IXYS |
| Configuration: | Single |
| Fall Time: | 33 ns |
| Id - Continuous Drain Current: | 32 A |
| Number of Channels: | 1 Channel |
| Pd - Power Dissipation: | 890 W |
| Product Type: | Discrete Semiconductor Modules |
| Rds On - Drain-Source Resistance: | 350 mOhms |
| Rise Time: | 27 ns |
| Factory Pack Quantity: Factory Pack Quantity: | 10 |
| Subcategory: | Discrete Semiconductor Modules |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Typical Turn-Off Delay Time: | 95 ns |
| Typical Turn-On Delay Time: | 37 ns |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Unit Weight: | 1.058219 oz |
1
67.28
67.28
10
62.04
620.4
30
59.26
1777.8
100
52.98
5298
