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| TYPE | DESCRIPTION |
| Manufacturer: | IXYS |
| Product Category: | Discrete Semiconductor Modules |
| RoHS: | Details |
| Vgs - Gate-Source Voltage: | - 30 V, + 30 V |
| Mounting Style: | Chassis Mount |
| Package / Case: | SOT-227-4 |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Series: | IXFN62N80 |
| Packaging: | Tube |
| Brand: | IXYS |
| Configuration: | Single |
| Id - Continuous Drain Current: | 49 A |
| Number of Channels: | 1 Channel |
| Pd - Power Dissipation: | 960 W |
| Product Type: | Discrete Semiconductor Modules |
| Rds On - Drain-Source Resistance: | 140 mOhms |
| Rise Time: | 300 ns |
| Factory Pack Quantity: Factory Pack Quantity: | 10 |
| Subcategory: | Discrete Semiconductor Modules |
| Technology: | Si |
| Tradename: | HiPerFET |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 800 V |
| Unit Weight: | 1.058219 oz |
1
112
112
10
104.48
1044.8
30
100.1
3003
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