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| TYPE | DESCRIPTION |
| Manufacturer: | IXYS |
| Product Category: | Discrete Semiconductor Modules |
| RoHS: | Details |
| Type: | GigaMOS Power MOSFET |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Mounting Style: | Chassis Mount |
| Package / Case: | SOT-227-4 |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Series: | IXFN160N30 |
| Packaging: | Tube |
| Brand: | IXYS |
| Configuration: | Single |
| Fall Time: | 25 ns |
| Height: | 12.22 mm |
| Id - Continuous Drain Current: | 130 A |
| Length: | 38.23 mm |
| Number of Channels: | 1 Channel |
| Pd - Power Dissipation: | 900 W |
| Product Type: | Discrete Semiconductor Modules |
| Rds On - Drain-Source Resistance: | 19 mOhms |
| Rise Time: | 38 ns |
| Factory Pack Quantity: Factory Pack Quantity: | 10 |
| Subcategory: | Discrete Semiconductor Modules |
| Technology: | Si |
| Tradename: | HiPerFET |
| Transistor Polarity: | N-Channel |
| Typical Turn-Off Delay Time: | 105 ns |
| Typical Turn-On Delay Time: | 37 ns |
| Vds - Drain-Source Breakdown Voltage: | 300 V |
| Vgs th - Gate-Source Threshold Voltage: | 5 V |
| Width: | 25.42 mm |
| Unit Weight: | 1.058219 oz |
1
56.32
56.32
10
51.92
519.2
30
49.58
1487.4
100
44.34
4434
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