TYPE | DESCRIPTION |
Manufacturer: | IXYS |
Product Category: | Discrete Semiconductor Modules |
RoHS: | Details |
Vgs - Gate-Source Voltage: | - 30 V, + 30 V |
Mounting Style: | Chassis Mount |
Package / Case: | SOT-227-4 |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
Series: | HiPerFET |
Packaging: | Tube |
Brand: | IXYS |
Configuration: | Single |
Fall Time: | 11 ns |
Id - Continuous Drain Current: | 110 A |
Number of Channels: | 1 Channel |
Pd - Power Dissipation: | 1.17 kW |
Product Type: | Discrete Semiconductor Modules |
Rds On - Drain-Source Resistance: | 33 mOhms |
Rise Time: | 25 ns |
Factory Pack Quantity: Factory Pack Quantity: | 10 |
Subcategory: | Discrete Semiconductor Modules |
Technology: | Si |
Tradename: | HiPerFET |
Transistor Polarity: | N-Channel |
Typical Turn-Off Delay Time: | 144 ns |
Typical Turn-On Delay Time: | 50 ns |
Vds - Drain-Source Breakdown Voltage: | 850 V |
Vgs th - Gate-Source Threshold Voltage: | 3.5 V |
Unit Weight: | 1.058219 oz |
1
111.54
111.54
10
104.78
1047.8
30
101.4
3042