D2516ECMDXGJDI-R DRAM (Dynamic RAM)_Inventory of electronic components_Electronic equipment_Power management

D2516ECMDXGJDI-R


：	D2516ECMDXGJDI-R
：	DRAM (Dynamic RAM)
：	Kingston
：	4Gb (256Mbx16)
：	-
：	Reel
：	-

TYPE	DESCRIPTION

PDF(1)

2000

83.8174

167634.8

Texas Instruments

TL062ACP

IC OPAMP JFET 2 CIRCUIT 8DIP

Diodes Incorporated

AP62250WU-7

DCDC CONV HV BUCK TSOT26 T&R 3K

Texas Instruments

PCM3793ARHBR

IC STEREO AUD CODEC 16BIT 32-QFN

Littelfuse

023302.5MXP

233 Series Medium Acting 125 V 2.5 A 5 x 20 mm Cartridge Fuse

C&K

LCGGX1A10EC

SWITCH SNAP ACTION SPDT 1A 125V

onsemi

FDS3672

N-Channel 100 V 22 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

Vishay

SS12P4S-M3/86A

SS12P4S Series 40 V 12 A Surface Mount Schottky Rectifier - TO-277A

Micro Commercial Components

BAT43WS-TP

BAT43WS Series 30 V 200 mA 200 mW Surface Mount Schottky Barrier Diode -SOD-323

TE Connectivity

MS17143-4

Terminals TONGUE 22-16

Renesas

ISL95812IRZ-T

Multiphase PWM Regulator for VR12.5, VR12.6 and VR12.6+ CPUs

Maxim Integrated

MAX16956AUBA+T

36V, 300mA, Mini Buck Converter with 1.1uA IQ

Diodes Incorporated

AP2281-1FMG-7

simple sot23 boost controller

Microchip

TC4429VOA

TC4429 Series 18 V 2.5 Ohm 6 A (peak) Single Output MOSFET Driver - SOIC-8

ScioSense

TDC-GP22 5K T&R

TDC-GP22 5K QFN32 LF T&R

TE Connectivity

292132-4

AMP CT 4 Position Through-Hole Single Row Straight 2 mm Box Header

Kingston

D2516ECMDXGJDI-R

4Gb (256Mbx16) DDR3L 1.35V 1866Mb/s/pin 96-ball FBGA Industrial Temperature

Panasonic

ERJ-8RQF2R2V

ERJ Series 1206 2.2 Ohm ±1% 0.25 W ±200 ppm/°C Thick Film Chip Resistor

Renesas

X9313WSZ-3

X9313 Series 10 kOhm SMT Digitally Controlled Potentiometer - SOIC-8

Toshiba

TLP3545A(TP1,F

MOSFET Output Optocouplers Photorelay 4A 60V 2500Vrms 640pF

Vishay Dale

IMS05WDSH4R7K40

FIXED IND 4.7UH 750MA 580MOHM TH

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