TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 60V |
Drain-Source On Resistance-Max: | 0.15Ω |
Rated Power Dissipation: | 8.94mW |
Qg Gate Charge: | 3.8nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 7.9A |
Turn-on Delay Time: | 2.6ns |
Turn-off Delay Time: | 12.3ns |
Rise Time: | 2.1ns |
Fall Time: | 4.6ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 3V |
Technology: | Si |
Height - Max: | 2.39mm |
Length: | 6.73mm |
Input Capacitance: | 459pF |
Package Style: | TO-252-3 (DPAK) |
Mounting Method: | Surface Mount |
2500
4.1646
10411.5
5000
3.9568
19784
7500
3.739
28042.5
10000
3.5211
35211
12500
3.3792
42240